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IGC136T170S8RH2
IGBT3 Power Chip
Features: 1700V Trench & Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling Qualified according to JEDEC for target
applications
Recommended for: power modules
Applications: drives
C G
E
Chip Type
VCE
ICn1 )
Die Size
Package
IGC136T170S8RH2 1700V 117.5A 17.72 x 7.7 mm2
sawn on foil
1 ) nominal collector current at Tc = 100°C, not subject to production test - verified by design/characterization
Mechanical Parameters Die size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal Backside metal
17.72 x 7.7 See chip drawing
1.674 x 0.899 136.
IGC136T170S8RH2 Datasheet
