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IGC13T120T6L
IGBT4 Low Power Chip
Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling
This chip is used for: • low / medium power modules
Applications: • low / medium power drives
C G
E
Chip Type IGC13T120T6L
VCE ICn 1200V 10A
Die Size 3.54 x 3.81 mm2
Package sawn on foil
MECHANICAL PARAMETER Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
Die bond Wire bond Reject ink dot size
Recommended storage environment
3.54 x 3.81
1.497 x 2.34 0.608 x 1.092
mm 2
13.48 / 6.
IGC13T120T6L Datasheet
