Datasheet Details
- Part number
- IGC168T170S8RM
- Manufacturer
- Infineon ↗
- File Size
- 165.66 KB
- Datasheet
- IGC168T170S8RM-Infineon.pdf
- Description
- IGBT
IGC168T170S8RM Description
IGC168T170S8RM IGBT3 Power Chip .
AQL 0,65 for visual inspection according to failure catalogue Electrostatic Discharge Sensitive Device according to MIL-STD 883
Revision History Vers.
IGC168T170S8RM Features
* 1700V Trench + Field stop technology
* low switching losses
* soft turn off
* positive temperature coefficient
* easy paralleling
This chip is used for:
IGC168T170S8RM Applications
* drives
Chip Type
VCE
IC
Die Size
IGC168T170S8RM 1700V 150A 13.38 x 12.58 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Pad metal
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