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IGC168T170S8RH
IGBT3 Power Chip
Features: 1700V Trench + Field stop technology low switching losses and saturation losses soft turn off positive temperature coefficient easy paralleling
This chip is used for: power modules
Applications: drives
Chip Type
VCE
IC
Die Size
IGC168T170S8RH 1700V 150A 13.38 x 12.58 mm2
C
G E
Package sawn on foil
Mechanical Parameters Raster size Emitter pad size (incl. gate pad) Gate pad size Area total Thickness Wafer size Max.possible chips per wafer Passivation frontside Pad metal
Backside metal
13.38 x 12.58
11.159 x 10.353 1.674 x 0.899
mm2
168.
IGC168T170S8RH Datasheet
