Datasheet Details
- Part number
- IMW65R039M1H
- Manufacturer
- Infineon ↗
- File Size
- 1.08 MB
- Datasheet
- IMW65R039M1H-Infineon.pdf
- Description
- 650V MOSFET
IMW65R039M1H Description
Public IMW65R039M1H Final datasheet CoolSiC™ M1 CoolSiC™ MOSFET 650 V G1 The 650 V CoolSiC™ is built over the solid silicon carbide technology develo.
1 Maxi.
IMW65R039M1H Features
* Optimized switching behavior at higher currents
* Commutation robust fast body diode with low Qfr
* Superior gate oxide reliability
* Tj,max=175°C and excellent thermal behavior
* Lower RDS(on) and pulse current dependency on temperature
* Increased
IMW65R039M1H Applications
* SMPS
* UPS (uninterruptable power supplies)
* Solar PV inverters
* EV charging infrastructure
* Energy storage and battery formation
* Class D amplifiers
Product validation
Fully qualified according to JEDEC for Industrial Applications
Table 1 Key p
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