Datasheet Details
- Part number
- IPP022N12NM6
- Manufacturer
- Infineon ↗
- File Size
- 1.64 MB
- Datasheet
- IPP022N12NM6-Infineon.pdf
- Description
- MOSFET
IPP022N12NM6 Description
IPP022N12NM6 MOSFET OptiMOSTM 6 Power-Transistor, 120 V .
IPP022N12NM6 Features
* N-channel, normal level
* Very low on-resistance RDS(on)
* Excellent gate charge x RDS(on) product (FOM)
* Very low reverse recovery charge (Qrr)
* High avalanche energy rating
* 175°C operating temperature
* Optimized for high frequency swit
IPP022N12NM6 Applications
* Table 1 Key Performance Parameters
Parameter
Value
Unit
VDS
120
V
RDS(on),max
2.2
mΩ
ID
203
A
Qoss
267
nC
QG (0V10V)
113
nC
Qrr (1000A/µs)
412.1
nC
PG-TO220-3
tab
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type / Ordering Code IPP022N12NM6
Package PG-TO220-3
Marking 02
📁 Related Datasheet
📌 All Tags
IPP022N12NM6 Stock/Price