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PTFA091201GL Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201GL Description

PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 * 960 MHz Descri.
The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

PTFA091201GL Features

* include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA091201GL-like datasheet