PTFA091201GL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA091201GL
Manufacturer	Infineon
File Size	308.71 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA091201GL Datasheet
Additional preview pages of the PTFA091201GL datasheet.

The PTFA091201GL and PTFA091201HL are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

include input and output matching, and thermally-enhanced plastic open-cavity packages with copper flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201GL Package PG-63248-2 PTFA091201HL Package PG-64248-2 Features EDGE Modulation Spectrum Performance VDD = 28 V, IDQ = 750 mA, ƒ = 959.8 MHz 0 55 50.
Thermally-enhanced plastic open-cavity (EPOC™) packages with copper flanges, Pb-free and R.

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Published: Aug 6, 2013 |