PTFA091203EL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA091203EL
Manufacturer	Infineon
File Size	437.49 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA091203EL Datasheet
Additional preview pages of the PTFA091203EL datasheet.

The PTFA091203EL is a 120-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. . PTFA091203EL Package H-33288-6 Features Two-carrier WCDMA Performance 3GPP signal, 10 MHz carrier spacing, BW = 3.84 MHz, PAR = 8 dB VDD = 30 V , IDQ = 1.05 A.
Broadband internal matching -15 Intermodulation Distortion (dBc) -20 -25 -30 -35 -40 -45 -50 -55 Drain Efficiency (%).

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Published: Aug 6, 2013 |