PTFA092201E Datasheet, Fets, Infineon

PTFA092201E Features

  • Fets
  • IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz

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Part number:

PTFA092201E

Manufacturer:

Infineon ↗

File Size:

397.27kb

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📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960

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PTFA092201E Application

  • Applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance an

TAGS

PTFA092201E
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

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Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 30V H-36260-2
DigiKey
PTFA092201E-V1
0 In Stock
Qty : 35 units
Unit Price : $127.57
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