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PTFA092201E

Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201E Features

* IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =

PTFA092201E General Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-362.

PTFA092201E Datasheet (397.27 KB)

Preview of PTFA092201E PDF

Datasheet Details

Part number:

PTFA092201E

Manufacturer:

Infineon ↗

File Size:

397.27 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFA092201E Thermally-Enhanced High Power LDMOS FETs Infineon

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