PTFA092201E Datasheet - Infineon

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PTFA092201E Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 * 960 MHz .
The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

PTFA092201E_Infineon.pdf

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Datasheet Details

Part number:

PTFA092201E

Manufacturer:

Infineon ↗

File Size:

397.27 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =

Applications

* in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-36260-2 PTFA092201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA

PTFA092201E Distributors

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PTFA092201E Thermally-Enhanced High Power LDMOS FETs Infineon

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