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PTFA092211FL

Thermally-Enhanced High Power RF LDMOS FETs

PTFA092211FL Features

* Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =

* 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P

* 1dB = 250 W

PTFA092211FL General Description

The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-.

PTFA092211FL Datasheet (442.53 KB)

Preview of PTFA092211FL PDF

Datasheet Details

Part number:

PTFA092211FL

Manufacturer:

Infineon ↗

File Size:

442.53 KB

Description:

Thermally-enhanced high power rf ldmos fets.
PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920

* 960 MHz Descri.

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PTFA092211FL Thermally-Enhanced High Power LDMOS FETs Infineon

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