PTFA092211EL Datasheet - Infineon

PTFA092211EL, Thermally-Enhanced High Power RF LDMOS FETs

PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 * 960 MHz Descri.
The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

datasheet Preview Page 1 from Datasheet4u.com

PTFA092211EL_Infineon.pdf

PTFA092211EL Datasheet Preview — Preview of PTFA092211EL PDF

Datasheet Details

Part number:

PTFA092211EL

Manufacturer:

Infineon ↗

File Size:

442.53 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =
* 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P
* 1dB = 250 W

Applications

* in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCD

PTFA092211EL Distributors

📁 Related Datasheet

PTFA080551E PTFA080551F PTFA PTFA142401EL PTFA142401FL PTFA180701E

📌 All Tags

PTFA092211EL Thermally-Enhanced High Power LDMOS FETs Infineon

Infineon PTFA092211EL-like datasheet