Datasheet4U Logo Datasheet4U.com

PTFA092211EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA092211EL Description

PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 * 960 MHz Descri.
The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

PTFA092211EL Features

* Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermodulation distortion =
* 37 dBc Typical CW performance, 940 MHz, 30 V - Output power at P
* 1dB = 250 W

PTFA092211EL Applications

* in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092211EL Package H-33288-2 PTFA092211FL Package H-34288-2 Two-carrier WCDMA Performance VDD = 30 V, IDQ = 1.50 A, ƒ = 940 MHz, 3GPP WCD

📥 Download Datasheet

Preview of PTFA092211EL PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
  • PTFA - Plug Type Fixed Attenuator (OPLINK)
  • PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
  • PTFA181001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

📌 All Tags

Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA092211EL-like datasheet