PTFA092211EL Datasheet, Fets, Infineon

PTFA092211EL Features

  • Fets
  • Broadband internal matching Typical two-carrier WCDMA performance at 940 MHz, 30 V - Average output power = 50 W - Linear Gain = 18.0 dB - Efficiency = 30% - Intermo

PDF File Details

Part number:

PTFA092211EL

Manufacturer:

Infineon ↗

File Size:

442.53kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fets. The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 9

Datasheet Preview: PTFA092211EL 📥 Download PDF (442.53kb)
Page 2 of PTFA092211EL Page 3 of PTFA092211EL

PTFA092211EL Application

  • Applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance an

TAGS

PTFA092211EL
Thermally-Enhanced
High
Power
LDMOS
FETs
Infineon

📁 Related Datasheet

PTFA092211FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th.

PTFA092213EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th.

PTFA092213FL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA092213EL PTFA092213FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description Th.

PTFA092201E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, int.

PTFA092201F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092201E and PTFA092201F are 220-watt, int.

PTFA091201E - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The .

PTFA091201F - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The .

PTFA091201GL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description Th.

PTFA091201HL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA091201GL PTFA091201HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description Th.

PTFA091203EL - Thermally-Enhanced High Power RF LDMOS FETs (Infineon)
PTFA091203EL Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 – 960 MHz Description The PTFA091203EL is a 120-watt, internally-matched FET inte.

Stock and price

Infineon Technologies AG
RF MOSFET LDMOS 30V H-33288-2
DigiKey
PTFA092211ELV4R250XTMA1
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts