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PTFA092201F

Thermally-Enhanced High Power RF LDMOS FETs

PTFA092201F Features

* IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =

PTFA092201F General Description

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-362.

PTFA092201F Datasheet (397.27 KB)

Preview of PTFA092201F PDF

Datasheet Details

Part number:

PTFA092201F

Manufacturer:

Infineon ↗

File Size:

397.27 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFA092201F Thermally-Enhanced High Power LDMOS FETs Infineon

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