PTFA092201F - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Part number	PTFA092201F
Manufacturer	Infineon
File Size	397.27 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA092201F Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA092201F, PTFA092201E. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA092201F datasheet.

The PTFA092201E and PTFA092201F are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications in the 920 to 960 MHz band.

IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =.
37 dBc - Adjacent channel power =.
39 dBc Typical CW performance, 960 MHz, 30 V - Output power at P.
1dB = 250 W - Gain = 17.5 dB - Efficiency = 59% Integrated ESD protection: Huma.

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Published: Aug 6, 2013 |