PTFA092201F Description
PTFA092201E PTFA092201F Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 * 960 MHz .PTFA092201F Features
* IMD (dBc), ACPR (dBc) Pb-free, RoHS-compliant and thermally-enhanced packages Broadband internal matching Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 55 W - Linear Gain = 18.5 dB - Efficiency = 30% - Intermodulation distortion =PTFA092201F Applications
* in the 920 to 960 MHz band. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA092201E Package H-36260-2 PTFA092201F Package H-37260-2 2-Carrier WCDMA Performance VDD = 30 V, IDQ = 1850 mA, ƒ = 960 MHz, 3GPP WCDMA
📁 Related Datasheet
📌 All Tags
