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PTFA091201E Thermally-Enhanced High Power RF LDMOS FETs

PTFA091201E Description

PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920 * 960 MHz Descript.
The PTFA091201E and PTFA091201F are 120-watt LDMOS FETs designed for ultra-linear GSM/EDGE power amplifier applications in the 920 to 960 MHz band.

PTFA091201E Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Mo

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Thermally-Enhanced High Power LDMOS FETs Infineon
Infineon PTFA091201E-like datasheet