PTFA091201E

Thermally-Enhanced High Power RF LDMOS FETs

Infineon

PTFA091201E Features

* include input and output matching, and thermally-enhanced packages with slotted or earless flanges. Manufactured with Infineon's advanced LDMOS process, these devices provide excellent thermal performance and superior reliability. PTFA091201E Package H-36248-2 PTFA091201F Package H-37248-2 EDGE Mo

PTFA091201E Datasheet (285.00 KB)

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PTFA091201E

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Infineon ↗

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285.00 KB

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Thermally-enhanced high power rf ldmos fets.
PTFA091201E PTFA091201F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 120 W, 920

* 960 MHz Descript.

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PTFA091201E Thermally-Enhanced High Power LDMOS FETs Infineon

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PTFA091201E Features

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