PTFA091503EL

Thermally-Enhanced High Power RF LDMOS FETs

Infineon

PTFA091503EL Features

* internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA sign

PTFA091503EL Datasheet (544.60 KB)

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PTFA091503EL

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Infineon ↗

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544.60 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFA091503EL Thermally-Enhanced High Power LDMOS FETs Infineon

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PTFA091503EL Features

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