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PTFA091503EL Datasheet - Infineon

PTFA091503EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA091503EL Features

* internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA sign

PTFA091503EL_Infineon.pdf

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Datasheet Details

Part number:

PTFA091503EL

Manufacturer:

Infineon ↗

File Size:

544.60 KB

Description:

Thermally-enhanced high power rf ldmos fets.

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PTFA091503EL PTFA091503EL Thermally-Enhanced High Power LDMOS FETs Infineon

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