PTFA091503EL Datasheet - Infineon

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PTFA091503EL Thermally-Enhanced High Power RF LDMOS FETs

PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 * 960 MHz .
The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power amplifier applications in the 920 to 960 MHz band.

PTFA091503EL_Infineon.pdf

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Datasheet Details

Part number:

PTFA091503EL

Manufacturer:

Infineon ↗

File Size:

544.60 KB

Description:

Thermally-Enhanced High Power RF LDMOS FETs

Features

* internal I/O matching and thermally-enhanced open cavity ceramic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTFA091503EL Package H-33288-6 Features VDD = 30 V, IDQ = 1250 mA, ƒ = 960 MHz, 3GPP WCDMA sign

PTFA091503EL Distributors

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PTFA091503EL Thermally-Enhanced High Power LDMOS FETs Infineon

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