PTFA092213FL - Thermally-Enhanced High Power RF LDMOS FETs

Product Overview

Infineon

Datasheet Details

Part number	PTFA092213FL
Manufacturer	Infineon
File Size	602.73 KB
Description	Thermally-Enhanced High Power RF LDMOS FETs
Datasheet	PTFA092213FL Datasheet
Note	This datasheet PDF includes multiple part numbers: PTFA092213FL, PTFA092213EL. Please refer to the document for exact specifications by model.
Additional preview pages of the PTFA092213FL datasheet.

Product details

Description

The PTFA092213EL and PTFA092213FL are 220-watt, internallymatched LDMOS FETs designed for use in cellular power amplifier applications in the 920 to 960 MHz band.

Features

Broadband internal matching.
Typical two-carrier WCDMA performance at 960 MHz, 30 V - Average output power = 50 W - Linear Gain = 17.5 dB - Efficiency = 29% - Intermodulation distortion =.
32 dBc - Adjacent channel power =.
42.5 dBc.
Typical CW performance, 960 MHz, 30 V - Output power at P1dB = 250 W - Linear Gain = 17.5 dB - Efficiency = 52%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stab.

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Published: Aug 6, 2013 |