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PTFA241301E

Thermally-Enhanced High Power RF LDMOS FET

PTFA241301E Features

* Thermally-enhanced packaging, Pb-free and RoHS-compliant

* Broadband internal matching

* Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%

* Typical CW performance, 2420 MHz, 28 V - Output power at P

PTFA241301E General Description

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lif.

PTFA241301E Datasheet (237.18 KB)

Preview of PTFA241301E PDF

Datasheet Details

Part number:

PTFA241301E

Manufacturer:

Infineon ↗

File Size:

237.18 KB

Description:

Thermally-enhanced high power rf ldmos fet.

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PTFA241301E Thermally-Enhanced High Power LDMOS FET Infineon

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