PTFA241301E

The PTFA241301E is Thermally-Enhanced High Power RF LDMOS FET designed by Infineon.

Product Overview

Infineon

Part number	PTFA241301E
Manufacturer	Infineon
File Size	237.18 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTFA241301E-Infineon.pdf
Additional preview pages of the PTFA241301E datasheet.

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications.

Thermally-enhanced packaging, Pb-free and RoHS-compliant.
Broadband internal matching.
Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%.
Typical CW performance, 2420 MHz, 28 V - Output power at P.
1dB = 140 W - Efficiency = 50%.
Integrated ESD protection: Human Body Model, Class 2 (minimum).
Excellent thermal stability, low HCI drift.
Capable of handling 10:1 VSWR.

📁 Similar Datasheet

PTFA220121M - High Power RF LDMOS Field Effect Transistor (Wolfspeed)
PTFA - Plug Type Fixed Attenuator (OPLINK)
PTFA080551E - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA080551F - Thermally-Enhanced High Power RF LDMOS FETs (Wolfspeed)
PTFA142401EL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA142401FL - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)
PTFA180701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon Technologies)

Other Datasheets by Infineon

Published: Feb 21, 2016 |