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PTFA241301F, PTFA241301E Datasheet - Infineon

PTFA241301F Thermally-Enhanced High Power RF LDMOS FET

The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applications. They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization ensures excellent device lif.

PTFA241301F Features

* Thermally-enhanced packaging, Pb-free and RoHS-compliant

* Broadband internal matching

* Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W - Linear Gain = 14 dB - Efficiency = 25%

* Typical CW performance, 2420 MHz, 28 V - Output power at P

PTFA241301E-Infineon.pdf

This datasheet PDF includes multiple part numbers: PTFA241301F, PTFA241301E. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

PTFA241301F, PTFA241301E

Manufacturer:

Infineon ↗

File Size:

237.18 KB

Description:

Thermally-enhanced high power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: PTFA241301F, PTFA241301E.
Please refer to the document for exact specifications by model.

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PTFA241301F PTFA241301E Thermally-Enhanced High Power LDMOS FET Infineon

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