PTFA241301F Datasheet, Fet, Infineon

PTFA241301F Features

• Fet
• Thermally-enhanced packaging, Pb-free and RoHS-compliant
• Broadband internal matching
• Typical CDMA2000 performance at 2450 MHz - Average output power = 25 W

PDF File Details

Part number:

PTFA241301F

Manufacturer:

Infineon ↗

File Size:

237.18kb

Download:

📄 Datasheet

Description:

Thermally-enhanced high power rf ldmos fet. The PTFA241301E and PTFA241301F are thermally-enhanced 130-watt, internally matched GOLDMOS ® FETs intended for ultralinear applicati

PTFA241301F Application

• Applications They are characterized for CDMA, CDMA2000, Super3G (3GPP TSG RAN), and WiMAX operation from 2420 to 2480 MHz. Full gold metallization

TAGS

PTFA241301F

Infineon

📁 Related Datasheet

PTFA241301E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA241301E PTFA241301F Thermally-Enhanced High Power RF LDMOS FETs 130 W, 2420 – 2480 MHz Description The PTFA241301E and PTFA241301F are thermally.

PTFA240451E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA240451E Thermally-Enhanced High Power RF LDMOS FET 45 W, 2420 – 2480 MHz Description The PTFA240451E is a thermally-enhanced, 45-watt, internall.

PTFA210301E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210301E Thermally-Enhanced High Power RF LDMOS FET 30 W, 2110 – 2170 MHz Description The PTFA210301E is a thermally-enhanced, 30-watt, internall.

PTFA210601E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD.

PTFA210601F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA210601E PTFA210601F Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 – 2170 MHz Description The PTFA210601E and PTFA210601F are 60-watt LD.

PTFA210701E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.

PTFA210701F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz PTFA210701E PTFA210701F Description The.

PTFA211001E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA211001E Thermally-Enhanced High Power RF LDMOS FET 100 W, 2110 – 2170 MHz Description The PTFA211001E is a thermally-enhanced, 100-watt, interna.

PTFA211801E - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
IM3 (dBc), ACPR (dBc) not DrainremenEffdiciencyed(%)for new design PTFA211801E Confidential, Limited Internal Distribution Thermally-Enhanced Hig.

PTFA211801F - Thermally-Enhanced High Power RF LDMOS FET (Infineon)
PTFA211801E PTFA211801F Thermally-Enhanced High Power RF LDMOS FETs 180 W, 2110 – 2170 MHz Description The PTFA211801E and PTFA211801F are thermally.