Datasheet Details
- Part number
- IPA028N08N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 378.50 KB
- Datasheet
- IPA028N08N3G_InfineonTechnologies.pdf
- Description
- Power-Transistor
IPA028N08N3G Description
OptiMOS(TM)3 Power-Transistor .
IPA028N08N3G Features
* Ideal for high frequency switching and sync. rec.
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* Very low on-resistance RDS(on)
* N-channel, normal level
* 100% avalanche tested
* Pb-free platin
IPA028N08N3G Applications
* Halogen-free according to IEC61249-2-21
Type
IPA028N08N3 G
IPA028N08N3 G
Product Summary VDS RDS(on),max ID
80 V 2.8 mW 89 A
Package
PG-TO-220-FP
Marking
028N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Continuous drain curre
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