Datasheet Details
- Part number
- IPD096N08N3G
- Manufacturer
- Infineon ↗ Technologies
- File Size
- 335.69 KB
- Datasheet
- IPD096N08N3G-InfineonTechnologies.pdf
- Description
- Power-Transistor
IPD096N08N3G Description
OptiMOS(TM)3 Power-Transistor .
IPD096N08N3G Features
* Ideal for high frequency switching
* Optimized technology for DC/DC converters
* Excellent gate charge x R DS(on) product (FOM)
* N-channel, normal level
* 100% avalanche tested
* Pb-free plating; RoHS compliant
* Qualified according to JEDEC
IPD096N08N3G Applications
* Halogen-free according to IEC61249-2-21
Type
IPD096N08N3 G
IPD096N08N3 G
Product Summary VDS RDS(on),max ID
80 V 9.6 mW 73 A
Package Marking
PG-TO252-3 096N08N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C
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