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PTF080451E LDMOS RF Power Field Effect Transistor 45 W/ 869-960 MHz

PTF080451E Description

PTF080451 LDMOS RF Power Field Effect Transistor 45 W, 869 *960 MHz .
The PTF080451 is a 45 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band.

PTF080451E Features

* Broadband internal matching Typical EDGE performance - Average output power = 22.5 W - Gain = 18 dB - Efficiency = 40% Typical CW performance - Output power at P
* 1dB = 60 W - Gain = 17 dB - Efficiency = 60% Integrated ESD protection: Human Body Model, Class 1 (minimum) Ex

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LDMOS Power Field Effect Transistor 869-960 MHz Infineon Technologies AG
Infineon Technologies AG PTF080451E-like datasheet