ITBH09200B2 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITBH09200B Product Datasheet V2.0 700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs .
The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies fr.

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Datasheet Specifications

Part number: ITBH09200B2
Manufacturer: Innogration
File Size: 974.16 KB
Datasheet: ITBH09200B2-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Compliant to Restriction of Haz

Applications

* with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2
* Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,

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ITBH09200B2 High Power LDMOS FET Innogration

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