ITBH09200B2 Datasheet - Innogration

ITBH09200B2 High Power RF LDMOS FET

The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2 *Typical Sing.

ITBH09200B2 Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Compliant to Restriction of Haz

ITBH09200B2-Innogration.pdf