ITBH09260B2E

High Power RF LDMOS FET

Innogration

ITBH09260B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain

* Source Voltage Gate

* Source Voltage Operating Voltage Storage Temperature Ra

ITBH09260B2E General Description

The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09260B2
*Typical Perf.

ITBH09260B2E Datasheet (791.68 KB)

ITBH09260B2E Datasheet Preview — Preview of ITBH09260B2E PDF

Datasheet Details

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ITBH09260B2E

Manufacturer:

Innogration

File Size:

791.68 KB

Description:

High power rf ldmos fet.

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ITBH09260B2E High Power LDMOS FET Innogration

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ITBH09260B2E Features

ITBH09260B2E General Description

Datasheet Details

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