ITBH09150B2E, ITBH09150B2 Datasheet - Innogration

ITBH09150B2E High Power RF LDMOS FET

The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09150B2 *Typical Perf.

ITBH09150B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain

* Source Voltage Gate

* Source Voltage Operating Voltage Storage Temperature Ra

ITBH09150B2-Innogration.pdf

ITBH09150B2E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITBH09150B2E, ITBH09150B2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITBH09150B2E, ITBH09150B2

Manufacturer:

Innogration

File Size:

1.02 MB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITBH09150B2E, ITBH09150B2.
Please refer to the document for exact specifications by model.

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ITBH09150B2E ITBH09150B2 High Power LDMOS FET Innogration

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