ITBH09150B2E Description
Innogration (Suzhou) Co., Ltd.Document Number: ITBH09150B Product Datasheet V2.0 700MHz-1000MHz, 150W, 28V High Power RF LDMOS FETs .
The ITBH09150B is a 150-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies fr.
ITBH09150B2E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
Table 1. Maximum Ratings Rating
Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
ITBH09150B2E Applications
* with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09150B2
* Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 1000 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10%
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