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ITBH09200B2E, ITBH09200B2 - High Power RF LDMOS FET

ITBH09200B2E Description

Innogration (Suzhou) Co., Ltd.Document Number: ITBH09200B Product Datasheet V2.0 700MHz-1000MHz, 200W, 28V High Power RF LDMOS FETs .
The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies fr.

ITBH09200B2E Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Compliant to Restriction of Haz

ITBH09200B2E Applications

* with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2
* Typical Single-Carrier W-CDMA Performance: VDD=28Volts, IDQ= 1000 mA, Pout= 40 Watts Avg. , IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: ITBH09200B2E, ITBH09200B2. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
ITBH09200B2E, ITBH09200B2
Manufacturer
Innogration
File Size
974.16 KB
Datasheet
ITBH09200B2-Innogration.pdf
Description
High Power RF LDMOS FET
Note
This datasheet PDF includes multiple part numbers: ITBH09200B2E, ITBH09200B2.
Please refer to the document for exact specifications by model.

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High Power LDMOS FET Innogration
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