ITBH09200B2E, ITBH09200B2 Datasheet - Innogration

ITBH09200B2E High Power RF LDMOS FET

The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2 *Typical Sing.

ITBH09200B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Compliant to Restriction of Haz

ITBH09200B2-Innogration.pdf

ITBH09200B2E Datasheet Preview — This datasheet PDF includes multiple part numbers: ITBH09200B2E, ITBH09200B2. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

ITBH09200B2E, ITBH09200B2

Manufacturer:

Innogration

File Size:

974.16 KB

Description:

High power rf ldmos fet.

Note:

This datasheet PDF includes multiple part numbers: ITBH09200B2E, ITBH09200B2.
Please refer to the document for exact specifications by model.

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ITBH09200B2E ITBH09200B2 High Power LDMOS FET Innogration

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