ITBH09200B2E

High Power RF LDMOS FET

Innogration

ITBH09200B2E Features

* High Efficiency and Linear Gain Operations

* Integrated ESD Protection

* Internally Matched for Ease of Use

* Excellent thermal stability, low HCI drift

* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation

* Compliant to Restriction of Haz

ITBH09200B2E General Description

The ITBH09200B is a 200-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09200B2
*Typical Sing.

ITBH09200B2E Datasheet (974.16 KB)

ITBH09200B2E Datasheet Preview — Preview of ITBH09200B2E PDF

Datasheet Details

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ITBH09200B2E

Manufacturer:

Innogration

File Size:

974.16 KB

Description:

High power rf ldmos fet.

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ITBH09200B2E High Power LDMOS FET Innogration

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ITBH09200B2E Features

ITBH09200B2E General Description

Datasheet Details

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