ITBH09260B2 Datasheet - Innogration

ITBH09260B2, High Power RF LDMOS FET

Innogration (Suzhou) Co., Ltd.Document Number: ITBH09260B Product Datasheet V1.0 700MHz-1000MHz, 260W, 28V High Power RF LDMOS FETs .
The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies fr.

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Datasheet Details

Part number:

ITBH09260B2

Manufacturer:

Innogration

File Size:

791.68 KB

Description:

High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra

Applications

* with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09260B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1200 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10%

ITBH09260B2 Distributors

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ITBH09260B2 High Power LDMOS FET Innogration

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