ITBH09260B2 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITBH09260B Product Datasheet V1.0 700MHz-1000MHz, 260W, 28V High Power RF LDMOS FETs .
The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies fr.

📥 Download Datasheet

ITBH09260B2 Datasheet Preview — Preview of ITBH09260B2 PDF

Datasheet Specifications

Part number: ITBH09260B2
Manufacturer: Innogration
File Size: 791.68 KB
Datasheet: ITBH09260B2-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra

Applications

* with frequencies from 700 to 1000 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITBH09260B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 1200 mA, Pulse CW, Pulse Width=100 us, Duty cycle=10%

ITBH09260B2 Distributors

📁 Related Datasheet

ITB0505S ITB0512S ITB0515S ITB1 ITB1205S ITB1212S

📌 All Tags

ITBH09260B2 High Power LDMOS FET Innogration

Innogration ITBH09260B2-like datasheet