ITBH09260B2 - High Power RF LDMOS FET
The ITBH09260B is a 260-watt, internally matched LDMOS FET, designed for CDMA/WCDMA and multicarrier GSM base station applications with frequencies from 700 to 1000 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITBH09260B2 *Typical Perf
ITBH09260B2 Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra
