ITCH16180B2 High Power RF LDMOS FET

Innogration

Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH16180B2 Preliminary Datasheet V2.0 1300MHz-1700MHz, 180W, 28V High Power RF LDMOS FETs Descript.
The ITCH16180B2 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.

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Datasheet Specifications

Part number: ITCH16180B2
Manufacturer: Innogration
File Size: 1.01 MB
Datasheet: ITCH16180B2-Innogration.pdf
Description: High Power RF LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift Table 1. Maximum Ratings Rating Drain
* Source Voltage Gate
* Source Voltage Operating Voltage Storage Temperature Ra

Applications

* with frequencies from 1300 to 1700 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH16180B2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 800 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

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ITCH16180B2 High Power LDMOS FET Innogration

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