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ITCH24025E2 RF Power LDMOS FET

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Description

Innogration (Suzhou) Co., Ltd.Document Number: ITCH24025E2 Preliminary Datasheet V2.0 700MHz-2700MHz, 30W, 28V RF Power LDMOS FETs .
The ITCH24025E2 is a 30-watt, internally matched LDMOS FET, designed for cellular base station and ISM applications with frequencies from 700MHz to 27.

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Datasheet Specifications

Part number
ITCH24025E2
Manufacturer
Innogration
File Size
0.98 MB
Datasheet
ITCH24025E2-Innogration.pdf
Description
RF Power LDMOS FET

Features

* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table

Applications

* with frequencies from 700MHz to 2700 MHz ITCH24025E2
* Typical Performance (On Innogration fixture with device soldered): VDD = 28 Volts, IDQ = 200 mA , Pulse Width =10us, Duty Cycle =12%. Frequency P_1dB ηD P_3dB ηD Gp (dB) (MHz) (dBm) (%) (dBm) (%) 850~900 22 45 64 46 67 1

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