Datasheet Details
Part number:
ITCH24100B2E, ITCH24100B2
Manufacturer:
Innogration
File Size:
835.75 KB
Description:
High power rf ldmos fet.
Note:
This datasheet PDF includes multiple part numbers: ITCH24100B2E, ITCH24100B2.
Please refer to the document for exact specifications by model.
ITCH24100B2E, ITCH24100B2, High Power RF LDMOS FET
The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 2300 to 2400 MHz.
It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats.
ITCH24100B2 *Typ
ITCH24100B2E Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant Table
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