Description
Innogration (Suzhou) Co., Ltd.Document Number: ITCH24100B2 Preliminary Datasheet V1.0 2300MHz-2400MHz, 100W, 28V High Power RF LDMOS FETs Descript.
The ITCH24100B2 is a 100-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with freque.
Features
* High Efficiency and Linear Gain Operations
* Integrated ESD Protection
* Internally Matched for Ease of Use
* Excellent thermal stability, low HCI drift
* Large Positive and Negative Gate/Source Voltage Range for Improved Class C Operation
* Pb-free, RoHS-compliant
Table
Applications
* with frequencies from 2300 to 2400 MHz. It Can be used in Class AB/B and Class C for all typical cellular base station modulation formats. ITCH24100B2
* Typical Performance (On Innogration fixture with device soldered):
VDD = 28 Volts, IDQ = 900 mA, Pulse CW, Pulse Width=100 us, Duty cycle=20%
