IS62LV12816LL - ULTRA LOW POWER CMOS STATIC RAM

Product Overview

Integrated Circuit Solution

Datasheet Details

Part number	IS62LV12816LL
Manufacturer	Integrated Circuit Solution
File Size	499.93 KB
Description	ULTRA LOW POWER CMOS STATIC RAM
Datasheet	IS62LV12816LL Datasheet
Additional preview pages of the IS62LV12816LL datasheet.

Product details

Description

The 1+51 IS62LV12816L and IS62LV12816LL are high-speed, 2.097,152-bit static RAMs organized as 131,072 words by 16 bits.They are fabricated using 1+51's high-performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.When CE is HIGH (deselected) or when CE is low and both LB and UB are HIGH, the device assumes a standby mode at which the power dissipation can be reduced by using CMOS in

Features

High-speed access times: 55, 70, 100 ns CMOS low power operation -- 120 mW (typical) operating -- 6 µW (typical) CMOS standby TTL compatible interface levels Single 2.7V-3.6V Vcc power supply Fully static operation: no clock or refresh required Three state outputs Data control for upper and lower bytes Industrial temperature available Available in the 44-pin TSOP-2 and 48-pin 6.
8mm TF-BGA.

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Published: Oct 10, 2007 |