Datasheet4U Logo Datasheet4U.com

IRF5803 - Power MOSFET

Datasheet Summary

Description

These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.

This benefit provides the designer with an extremely efficient device for use in battery and load management applications.

📥 Download Datasheet

Datasheet preview – IRF5803

📁 Similar Datasheet

  • IRF5803 - Power MOSFET (Infineon)
  • IRF5803PbF - Power MOSFET (Infineon)
  • IRF50N06 - N-Channel MOSFET (YZPST)
  • IRF510 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF510 - N-Channel Power MOSFET (Fairchild Semiconductor)
  • IRF510 - Power MOSFET (Vishay)
  • IRF510A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF510S - Power MOSFET (Vishay)
  • IRF511 - N-Channel MOSFET Transistor (Inchange Semiconductor)
  • IRF511 - N-Channel Power MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l Halogen-Free Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23.
Published: |