IRF6626 - DirectFET Power MOSFET
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used
www.DataSheet4U.com PD - 96976D IRF6626 DirectFET Power MOSFET RoHS compliant containing no lead or bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.
FET and some Control FET applications l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l Typical values (unless otherwise specified) VDSS Qg
IRF6626 Features
* 0 0.01 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 80 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Cur
