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IRF6626 Datasheet - International Rectifier

IRF6626 - DirectFET Power MOSFET

The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used

www.DataSheet4U.com PD - 96976D IRF6626 DirectFET™ Power MOSFET ‚ RoHS compliant containing no lead or bromide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Ideal for CPU Core DC-DC Converters l Optimized for both Sync.

FET and some Control FET applications  l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l Typical values (unless otherwise specified) VDSS Qg

IRF6626 Features

* 0 0.01 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 80 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Cur

IRF6626_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6626

Manufacturer:

International Rectifier

File Size:

658.97 KB

Description:

Directfet power mosfet.

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