IRF6626 DirectFET Power MOSFET

International Rectifier

Description

www.DataSheet4U.com PD - 96976D IRF6626 DirectFET Power MOSFET RoHS compliant containing no lead or bromide l Low Profile (<0.7 mm) l Dual Side.
The IRF6626 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number: IRF6626
Manufacturer: International Rectifier
File Size: 658.97 KB
Datasheet: IRF6626_InternationalRectifier.pdf
Description: DirectFET Power MOSFET

Features

* 0 0.01 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 80 VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 50µA 70 60 50 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID, Drain Cur

Applications

* l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques l Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 6.7nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 13nC 30V max ±20V max 4.0mΩ@ 10V 5.2mΩ@ 4.5V Qrr 5.4nC Vgs(th) 1.8V 19nC ST Applicable Direc

IRF6626 Distributors

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IRF6626 DirectFET Power MOSFET International Rectifier

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