IRF6620TRPBF - Power MOSFET
The IRF6620PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries use
PD - 97092 IRF6620PbF IRF6620TRPbF l l l l l l l l l RoHS Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques DirectFET Power MOSFET VDSS 20V RDS(on) max 2.7mΩ@VGS = 10V 3.6mΩ@VGS = 4.5V Qg(typ.) 28nC MX Applicable DirectFET Outline and Substrate Outline (see p.8,9 for detail
IRF6620TRPBF Features
* + V - DD A D.U.T VGS Pulse Width < 1µs Duty Factor < 0.1% 0.01Ω Fig 13a. Unclamped Inductive Test Circuit V(BR)DSS tp Fig 14a. Switching Time Test Circuit 90% VDS 10% VGS I AS td(on) tr td(off) tf Fig 13b. Unclamped Inductive Waveforms Fig 14b. Switching Time Waveforms Id Vds Vgs L 0
