Description
PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET Power MOSFET l RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific M.
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.
Features
* 0.1 1.0
10.0
100.0
VDS, Drain-to-Source Voltage (V)
Fig11. Maximum Safe Operating Area
2.5
Typical VGS(th) Gate threshold Voltage (V)
ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ)
50
40
2.0 ID = 250µA
30
20 1.5
10
0 25 50 75 100 125 150 TC, Case Temperature (°C)
Fig 12.
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t