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IRF6621TRPbF, IRF6621PbF Power MOSFET

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Description

PD - 97093 IRF6621PbF IRF6621TRPbF DirectFET™ Power MOSFET ‚ l RoHS Compliant  l Lead-Free (Qualified up to 260°C Reflow) l Application Specific M.
The IRF6621PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state res.

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This datasheet PDF includes multiple part numbers: IRF6621TRPbF, IRF6621PbF. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IRF6621TRPbF, IRF6621PbF
Manufacturer
International Rectifier
File Size
252.22 KB
Datasheet
IRF6621PbF-InternationalRectifier.pdf
Description
Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IRF6621TRPbF, IRF6621PbF.
Please refer to the document for exact specifications by model.

Features

* 0.1 1.0 10.0 100.0 VDS, Drain-to-Source Voltage (V) Fig11. Maximum Safe Operating Area 2.5 Typical VGS(th) Gate threshold Voltage (V) ID, Drain Current (A) EAS, Single Pulse Avalanche Energy (mJ) 50 40 2.0 ID = 250µA 30 20 1.5 10 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig 12.

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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