IRF6622 Datasheet - International Rectifier

IRF6622 DirectFET Power MOSFET

The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile. The IRF6622 balances both low resist.

www.DataSheet4U.com PD - 97199 IRF6622 DirectFET Power MOSFET l l l l l l l l l RoHs Compliant Containing No Lead and Bromide Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 3.8nC RDS(on) Q.

IRF6622 Features

* anche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.7A 5.3A BOTTOM 12A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6622 Current Regulator Same Type as D.

IRF6622 Datasheet (261.73 KB)