IRF6622 - DirectFET Power MOSFET
The IRF6622 combines the latest HEXFET Power MOSFET Silicon Technology with the advanced DirectFET packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a Micro-8, and only 0.6mm profile.
The IRF6622 balances both low resist
www.DataSheet4U.com PD - 97199 IRF6622 DirectFET Power MOSFET l l l l l l l l l RoHs Compliant Containing No Lead and Bromide Low Profile (<0.6 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for Control FET Socket Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 3.8nC RDS(on) Q
IRF6622 Features
* anche Energy (mJ) Fig 13. Typical Threshold Voltage vs. Junction Temperature ID 3.7A 5.3A BOTTOM 12A TOP 50 40 30 20 10 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig 14. Maximum Avalanche Energy vs. Drain Current www.irf.com 5 IRF6622 Current Regulator Same Type as D.
