IRF6622PBF DirectFET Power MOSFET

International Rectifier

Description

www.DataSheet4U.com IRF6622PbF IRF6622TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) PD - 97244 l l l l l l l l l RoH.
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.

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Datasheet Specifications

Part number: IRF6622PBF
Manufacturer: International Rectifier
File Size: 267.78 KB
Datasheet: IRF6622PBF_InternationalRectifier.pdf
Description: DirectFET Power MOSFET

Features

* 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID = 50µA ID = 100µA ID = 250µA ID = 1mA ID = 1.0A Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanch

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma

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IRF6622PBF DirectFET Power MOSFET International Rectifier

International Rectifier IRF6622PBF-like datasheet