IRF6622PBF - DirectFET Power MOSFET
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a Micro-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries u
www.DataSheet4U.com IRF6622PbF IRF6622TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) PD - 97244 l l l l l l l l l RoHs Compliant Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques VDSS Qg tot VGS Qgd 3.8nC RDS(on) Qgs2 1.6nC RDS(on) Qoss 7.7nC 25V max ±20V
IRF6622PBF Features
* 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C) ID = 50µA ID = 100µA ID = 250µA ID = 1mA ID = 1.0A Fig 12. Maximum Drain Current vs. Case Temperature 60 EAS , Single Pulse Avalanch
