IRF6621 Datasheet - International Rectifier

Power MOSFET

IRF6621 Features

* Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temp

IRF6621 General Description

The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6621 Datasheet (254.49 KB)

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IRF6621

Manufacturer:

International Rectifier

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254.49 KB

Description:

Power mosfet.
PD - 97005 IRF6621 DirectFET Power MOSFET l l l l l l l l l RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cool.

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IRF6621 Power MOSFET International Rectifier

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IRF6621 Features

IRF6621 General Description

Datasheet Details

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