IRF6621 Datasheet - International Rectifier

IRF6621, Power MOSFET

PD - 97005 IRF6621 DirectFET Power MOSFET l l l l l l l l l RoHs Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cool.
The IRF6621 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Details

Part number:

IRF6621

Manufacturer:

International Rectifier

File Size:

254.49 KB

Description:

Power MOSFET

Features

* Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ , Junction Temp

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best t

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IRF6621 Power MOSFET International Rectifier

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