IRF6620 - HEXFETPower MOSFET
The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with existing layout geometries used i
IRF6620 Features
* godr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 5 IRF6620 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V
* + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Trans
