IRF6620 Datasheet - International Rectifier

IRF6620 HEXFETPower MOSFET

The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used i.

IRF6620 Features

* godr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www.irf.com 5 IRF6620 D.U.T Driver Gate Drive + P.W. Period D= P.W. Period VGS=10V

* + Circuit Layout Considerations

* Low Stray Inductance

* Ground Plane

* Low Leakage Inductance Current Trans

IRF6620_InternationalRectifier.pdf