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IRF6620 HEXFETPower MOSFET

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Description

PD - 95823A IRF6620 l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profil.
The IRF6620 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resista.

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Datasheet Specifications

Part number
IRF6620
Manufacturer
International Rectifier
File Size
180.75 KB
Datasheet
IRF6620_InternationalRectifier.pdf
Description
HEXFETPower MOSFET

Features

* godr Fig 15. Gate Charge Test Circuit Fig 16. Gate Charge Waveform www. irf. com 5 IRF6620 D. U. T Driver Gate Drive + P. W. Period D= P. W. Period VGS=10V
* + Circuit Layout Considerations
* Low Stray Inductance
* Ground Plane
* Low Leakage Inductance Current Trans

Applications

* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, IMPROVING previous best t

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