Description
www.DataSheet4U.com IRF6622PbF IRF6622TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) PD - 97244 l l l l l l l l l RoH.
The IRF6622PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resi.
Features
* 0.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Temperature ( °C ) ID = 25µA
50
ID, Drain Current (A)
40 30 20 10 0 25 50 75 100 125 150 T C , Case Temperature (°C)
ID = 50µA
ID = 100µA ID = 250µA ID = 1mA ID = 1.0A
Fig 12. Maximum Drain Current vs. Case Temperature
60
EAS , Single Pulse Avalanch
Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best therma