IRF6637PBF Datasheet (International Rectifier)

IRF6637PBF, Power MOSFET

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

The DirectFET package is compatible with existing layout geometries used in

PD - 97088 DirectFET Power MOSFET RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses and Switching Losses l Low Profile (<0.7mm) l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques l IRF6637PbF IRF6637TRPbF RDS(on) RDS(on) Qoss 9.9nC Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 4.0nC 30V max ±20V max 5.7mΩ@ 10V 8.2mΩ@ 4.5V Qgs2 1.0

IRF6637PBF Features

* ltage (V) 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 5