IRF6637PBF

Power MOSFET

International Rectifier

IRF6637PBF Features

* ltage (V) 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 5

IRF6637PBF General Description

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in .

IRF6637PBF Datasheet (287.79 KB)

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IRF6637PBF

Manufacturer:

International Rectifier

File Size:

287.79 KB

Description:

Power mosfet.
PD - 97088 DirectFET Power MOSFET RoHS Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for CPU Core .

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IRF6637PBF Power MOSFET International Rectifier

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IRF6637PBF Features

IRF6637PBF General Description

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