IRF6655RPBF Datasheet - International Rectifier

DirectFET Power MOSFET

IRF6655RPBF Features

* EA LIMITED BY R DS(on) 100µsec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V)

IRF6655RPBF General Description

The IRF6655PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compa.

IRF6655RPBF Datasheet (298.85 KB)

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IRF6655RPBF

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International Rectifier

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298.85 KB

Description:

Directfet power mosfet.
PD - 97226A DirectFET Power MOSFET RoHs Compliant l Lead-Free (Qualified up to 260°C Reflow) l Application Specific MOSFETs l Ideal for High Per.

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IRF6655RPBF DirectFET Power MOSFET International Rectifier

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IRF6655RPBF Features

IRF6655RPBF General Description

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