IRF6655 Datasheet - International Rectifier

IRF6655 DirectFET Power MOSFET Typical values

The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-state resistance and gate charge in a package that has a footprint similar to that of a micro-8, and only 0.7mm profile. The DirectFET package is compatib.

PD - 96926D www.DataSheet4U.com DirectFET Power MOSFET l IRF6655 RDS(on) 53mΩ@ 10V RoHS compliant containing no lead or bromide l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized for High Frequency Switching l Ideal for High Performance Isolated Converter Primary Switch Socket l Ideal for Control FET sockets in 36V 75V in Synchronous Buck applications l Low Conduction Losses l Compatible with existing Surface Mount Techniques .

IRF6655 Features

* sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Dr

IRF6655_InternationalRectifier.pdf