IRF6655 Datasheet - International Rectifier

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IRF6655 DirectFET Power MOSFET Typical values

PD - 96926D www.DataSheet4U.com DirectFET Power MOSFET l IRF6655 RDS(on) 53mΩ@ 10V RoHS compliant containing no lead or bromide l Low Profile .
The IRF6655 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest combined on-stat.

IRF6655_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF6655

Manufacturer:

International Rectifier

File Size:

283.99 KB

Description:

DirectFET Power MOSFET Typical values

Features

* sec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 10 100msec 10 T J = -40°C T J = 25°C T J = 150°C VGS = 0V 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD, Source-to-Drain Voltage (V) 1 1msec 10msec 0.1 0.01 0 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Dr

Applications

* l Low Conduction Losses l Compatible with existing Surface Mount Techniques Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SH MQ MX MT Typical values (unless otherwise specified) VDSS Qg tot VGS Qgd 2.8nC 100V max ±20V max 8.7nC Vgs(th) 3.9V SH MN Direc

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IRF6655 DirectFET Power MOSFET Typical values International Rectifier

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