IRF7379 Datasheet - International Rectifier

Power MOSFET

IRF7379 Features

* A - -V DS , D ra in -to -S ou rce V oltage (V ) Q G , Total G ate C harge (nC ) Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THER

IRF7379 General Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer .

IRF7379 Datasheet (215.39 KB)

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IRF7379

Manufacturer:

International Rectifier

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215.39 KB

Description:

Power mosfet.
PD - 91625 IRF7379 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Aval.

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IRF7379 Power MOSFET International Rectifier

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IRF7379 Features

IRF7379 General Description

Datasheet Details

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