Datasheet Details
- Part number
- IRF7379
- Manufacturer
- International Rectifier
- File Size
- 215.39 KB
- Datasheet
- IRF7379_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF7379 Description
PD - 91625 IRF7379 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Aval.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7379 Features
* A
- -V
DS
, D ra in -to -S ou rce V oltage (V )
Q G , Total G ate C harge (nC )
Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50
10
0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THER
IRF7379 Applications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i
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