Datasheet Specifications
- Part number
- IRF7379
- Manufacturer
- International Rectifier
- File Size
- 215.39 KB
- Datasheet
- IRF7379_InternationalRectifier.pdf
- Description
- Power MOSFET
Description
PD - 91625 IRF7379 HEXFET® Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Aval.
Features
* A - -V DS , D ra in -to -S ou rce V oltage (V ) Q G , Total G ate C harge (nC ) Fig 18. Typical Capacitance Vs. Drain-to-Source Voltage Fig 19. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 10 0.20 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERApplications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package iIRF7379 Distributors
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