IRF7379PBF Datasheet - International Rectifier

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IRF7379PBF Power MOSFET

PD - 95300 IRF7379PbF HEXFET® Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

IRF7379PBF_InternationalRectifier.pdf

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Datasheet Details

Part number:

IRF7379PBF

Manufacturer:

International Rectifier

File Size:

245.61 KB

Description:

Power MOSFET

Features

* ONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www. irf. com IRF7379PbF SO-8 Package Outline Dimensions

Applications

* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i

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