* ONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100 10 1 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 8 www.irf.com IRF7379PbF SO-8 Package Outline Dimensions
IRF7379PBF Datasheet (245.61 KB)
IRF7379PBF
International Rectifier
245.61 KB
Power mosfet.
PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully.
📁 Related Datasheet
IRF7379 Power MOSFET (International Rectifier)
IRF7379QPbF Power MOSFET (International Rectifier)
IRF737LC HEXFET Power MOSFET (International Rectifier)
IRF737LC Power MOSFET (Vishay)
IRF737LCPBF HEXFET Power MOSFET (International Rectifier)
IRF730 PowerMOS transistor (NXP)
IRF730 N-Channel Power MOSFET (STMicroelectronics)
IRF730 N-Channel Power MOSFET (Intersil Corporation)
IRF730 N-Channel Power MOSFET (Fairchild Semiconductor)
IRF730 N-Channel MOSFET (NTE)
