Datasheet Details
- Part number
- IRF7379PBF
- Manufacturer
- International Rectifier
- File Size
- 245.61 KB
- Datasheet
- IRF7379PBF_InternationalRectifier.pdf
- Description
- Power MOSFET
IRF7379PBF Description
PD - 95300 IRF7379PbF HEXFET® Power MOSFET l l l l l l Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully.
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
IRF7379PBF Features
* ONSE) 0.1 0.00001 0.0001 0.001 0.01 0.1 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 1 10 100
10
1
t1 , Rectangular Pulse Duration (sec)
Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7379PbF
SO-8 Package Outline
Dimensions
IRF7379PBF Applications
* The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package i
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