Datasheet4U Logo Datasheet4U.com

IRF737LC - HEXFET Power MOSFET

IRF737LC Description

PD - 9.1314 PRELIMINARY IRF737LC VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A HEXFET® Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating R.
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs.

IRF737LC Features

* 2 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg. , 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications s

IRF737LC Applications

* Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications. Absolute Maxi

📥 Download Datasheet

Preview of IRF737LC PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • IRF730 - PowerMOS transistor (NXP)
  • IRF730A - Power MOSFET (Vishay)
  • IRF730AL - Power MOSFET (Vishay)
  • IRF730AS - Power MOSFET (Vishay)
  • IRF730B - 400V N-Channel MOSFET (Fairchild Semiconductor)
  • IRF730FI - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF730PBF - N-Channel Type Power MOSFET (Thinki Semiconductor)
  • IRF730S - Power MOSFET (Vishay)

📌 All Tags

HEXFET Power MOSFET International Rectifier
International Rectifier IRF737LC-like datasheet