IRF737LC HEXFET Power MOSFET

International Rectifier

Description

PD - 9.1314 PRELIMINARY IRF737LC VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A HEXFET® Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating R.
This new series of Low Charge HEXFETs achieve significantly lower gate charge over conventional MOSFETs.

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Datasheet Specifications

Part number: IRF737LC
Manufacturer: International Rectifier
File Size: 145.51 KB
Datasheet: IRF737LC_InternationalRectifier.pdf
Description: HEXFET Power MOSFET

Features

* 2 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145 10111 IR FAR EAST: K&H Bldg. , 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 Data and specifications s

Applications

* Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristics of HEXFETs offer the designer a new standard in power transistors for switching applications. Absolute Maxi

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IRF737LC HEXFET Power MOSFET International Rectifier

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