IRF7379QPbF Datasheet, Mosfet, International Rectifier

IRF7379QPbF Features

  • Mosfet of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an e

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Part number:

IRF7379QPbF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. These HEXFET® Power MOSFET's in a Dual SO8 package utilize the lastest processing techniques to achieve extremely low on-resistance p

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IRF7379QPbF Application

  • Applications The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of po

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IRF7379QPbF
Power
MOSFET
International Rectifier

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Stock and price

part
International Rectifier
HEXFET POWER MOSFET Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
ComSIT USA
IRF7379QPBF
370 In Stock
0
Unit Price : $0
No Longer Stocked
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