IRF737LCPBF
International Rectifier
254.94kb
Hexfet power mosfet.
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IRF737LC - HEXFET Power MOSFET
(International Rectifier)
PD - 9.1314
PRELIMINARY
IRF737LC
VDSS = 300V RDS(on) = 0.75Ω ID = 6.1A
HEXFET® Power MOSFET
Reduced Gate Drive Requirement Enhanced 30V VGS Rating R.
IRF737LC - Power MOSFET
(Vishay)
Power MOSFET
IRF737LC, SiHF737LC
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
300 VGS = 10 .
IRF7379 - Power MOSFET
(International Rectifier)
PD - 91625
IRF7379
HEXFET® Power MOSFET
l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully Aval.
IRF7379PBF - Power MOSFET
(International Rectifier)
PD - 95300
IRF7379PbF
HEXFET® Power MOSFET
l l l l l l
Generation V Technology Ultra Low On-Resistance Complimentary Half Bridge Surface Mount Fully.
IRF7379QPbF - Power MOSFET
(International Rectifier)
l Advanced Process Technology l Ultra Low On-Resistance l Dual N and P Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Tem.
IRF730 - PowerMOS transistor
(NXP)
Philips Semiconductors
Product specification
PowerMOS transistor Avalanche energy rated
FEATURES
• Repetitive Avalanche Rated • Fast switching • Hig.
IRF730 - N-Channel Power MOSFET
(STMicroelectronics)
IRF730
N-channel 400V - 0.75Ω - 5.5A TO-220 Powermesh™II Power MOSFET
General features
Type IRF730
VDSS 400V
RDS(on) <1Ω
ID 5.5A
■ Exceptional d.
IRF730 - N-Channel Power MOSFET
(Intersil Corporation)
IRF730
Data Sheet July 1999 File Number
1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power.
IRF730 - N-Channel Power MOSFET
(Fairchild Semiconductor)
.
IRF730 - N-Channel MOSFET
(NTE)
IRF730
MOSFET
N−Channel, Enhancement Mode
High Speed Switch
TO−220 Type Package
D
Features: D Repetitive Avalanche Rated D Dynamic dv/dt Rating .
