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IRF7530 Power MOSFET

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Description

PD-93760C IRF7530 l Trench Technology l Ultra Low On-Resistance S1 l Dual N-Channel MOSFET G1 l Very Small SOIC Package l Low Profile (<1.1mm) .
New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silico.

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Applications

* The new Micro8 package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (

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