Datasheet Details
Part number:
IRF7530
Manufacturer:
International Rectifier
File Size:
100.13 KB
Description:
Power MOSFET
PD-93760C IRF7530 l Trench Technology l Ultra Low On-Resistance S1 l Dual N-Channel MOSFET G1 l Very Small SOIC Package l Low Profile (<1.1mm) S2 l Available in Tape & Reel G2 Description New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques
IRF7530_InternationalRectifier.pdf
IRF7530, Power MOSFET
New trench HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely
IRF7530 Distributor
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