Datasheet Details
Part number:
IRF7530PBF
Manufacturer:
International Rectifier
File Size:
143.57 KB
Description:
Power MOSFET
PD - 95243 IRF7530PbF l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailable in Tape & Reel l Lead-Free S1 G1 S2 G2 Description New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing tech
IRF7530PBF-InternationalRectifier.pdf
IRF7530PBF, Power MOSFET
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely
IRF7530PBF Distributor
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