IRF7530PBF

Power MOSFET

International Rectifier

IRF7530PBF General Description

New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely.

IRF7530PBF Datasheet (143.57 KB)

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IRF7530PBF

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International Rectifier

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143.57 KB

Description:

Power mosfet.
PD - 95243 IRF7530PbF l Trench Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Very Small SOIC Package l Low Profile (<1.1mm) lAvailab.

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IRF7530PBF Power MOSFET International Rectifier

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IRF7530PBF General Description

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