IRF8327SPBF Datasheet, Mosfet, International Rectifier

IRF8327SPBF Features

• Mosfet WIDTH Tj = 25°C 10 100 VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 100 10 VDS = 15V ≤60μs PULSE WIDTH TJ = 150°C TJ = 25°C TJ = -40°C 1 ID, Drain-t

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IRF8327SPBF

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International Rectifier

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📄 Datasheet

Description:

Power mosfet. The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lo

IRF8327SPBF Application

• Applications PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regard

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IRF8327SPBF

International Rectifier

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