Datasheet Details
- Part number
- IRF8327SPBF
- Manufacturer
- International Rectifier
- File Size
- 277.39 KB
- Datasheet
- IRF8327SPBF-InternationalRectifier.pdf
- Description
- Power MOSFET
IRF8327SPBF Description
IRF8327SPbF l RoHS Compliant and Halogen Free l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible l Ultra Low Package Inductance l Optimized .
The IRF8327SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging to achieve the lowest on-state res.
IRF8327SPBF Features
* 1
VGS = 0V 0
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 VSD, Source-to-Drain Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
60
50
40
30
20
10
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
250
200
150
Typical VGS(th) Gate threshold
IRF8327SPBF Applications
* PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET® package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best
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