IRF840LC
International Rectifier
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Power mosfet.
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IRF840L - Power MOSFET
(Vishay)
Power MOSFET
IRF840L, SiHF840L
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
.
IRF840LC - Power MOSFET
(Vishay)
.vishay.
IRF840LC
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg max. (nC) Qg.
IRF840LC - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF840LC
·FEATURES ·With low gate drive requirements ·Ultra low gate charge ·Extremely high f.
IRF840LCL - Power MOSFET
(International Rectifier)
PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced .
IRF840LCL - Power MOSFET
(TRANSYS)
IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unles.
IRF840LCL - Power MOSFET
(Vishay)
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
.vishay.
Vishay Siliconix
Power MOSFET
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
G
D G
S
S N.
IRF840LCS - Power MOSFET
(International Rectifier)
PD- 93766
IRF840LCS IRF840LCL
HEXFET® Power MOSFET
l l l l l l
Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced .
IRF840LCS - Power MOSFET
(TRANSYS)
IRF840LCS/LCL
Power MOSFET VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
D
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unles.
IRF840LCS - Power MOSFET
(Vishay)
IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL
.vishay.
Vishay Siliconix
Power MOSFET
I2PAK (TO-262)
D2PAK (TO-263)
D
G
SD
G
D G
S
S N.
IRF840 - N-Channel Power MOSFET
(STMicroelectronics)
®
IRF840
N - CHANNEL 500V - 0.75Ω - 8A - TO-220 PowerMESH™ MOSFET
TYPE IRF840
s s s s s
V DSS 500 V
R DS(on) < 0.85 Ω
ID 8 A
TYPICAL RDS(on) = 0.
